An improved CMOS-based inductor simulator with simplified structure for low-frequency applications

Hdl Handle:
http://hdl.handle.net/10149/611528
Title:
An improved CMOS-based inductor simulator with simplified structure for low-frequency applications
Authors:
Zhong, L. (Longjie); Lai, X. (Xinquan); Xu, D. (Donglai); Short, M. (Michael) ( 0000-0001-6290-4396 ) ; Yuan, B. (Bing); Wang, Z. (Zeyu)
Affiliation:
Teesside University. Technology Futures Institute
Citation:
Zhong, L., Lai, X., Xu, D., Short, M., Yuan, B., Wang, Z. (2016) 'An improved CMOS-based inductor simulator with simplified structure for low-frequency applications' Journal of Computational Electronics; Online first 30 May 2016 : DOI: 10.1007/s10825-016-0834-1
Publisher:
Springer
Journal:
Journal of Computational Electronics
Issue Date:
30-May-2016
URI:
http://hdl.handle.net/10149/611528
DOI:
10.1007/s10825-016-0834-1
Additional Links:
http://link.springer.com/10.1007/s10825-016-0834-1
Abstract:
In this paper, an improved inductor simulator structure is presented, which can be configured as either grounded or floating inductor simulator with low component count. To achieve simplified structure, inductor simulator circuits are designed using a minimal number of transistors and small capacitance, rather than the complex components/modules such as current convey and operational trans-conductance amplifier which are traditionally used. The simulation results based on 0.5μm CMOS process parameters show that the proposed structure is able to produce a broad range of inductance values and compared to other similar structures, it provides wider operational frequency bandwidth for the same or comparable inductance value. Furthermore, the structure can be implemented with much smaller chip area using a small capacitance in the circuit, but at the price that it has a higher minimum operational frequency compared to other structures.
Type:
Article
Language:
en
Keywords:
grounded inductor simulator; floating inductor simulator; active inductor; CMOS integrated circuits; MOSFET; operational frequency
ISSN:
1569-8025; 1572-8137
Rights:
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. For full details see http://link.springer.com/article/10.1007/s10825-016-0834-1#copyrightInformation [Accessed 02.06.16]

Full metadata record

DC FieldValue Language
dc.contributor.authorZhong, L. (Longjie)en
dc.contributor.authorLai, X. (Xinquan)en
dc.contributor.authorXu, D. (Donglai)en
dc.contributor.authorShort, M. (Michael)en
dc.contributor.authorYuan, B. (Bing)en
dc.contributor.authorWang, Z. (Zeyu)en
dc.date.accessioned2016-06-02T11:38:36Zen
dc.date.available2016-06-02T11:38:36Zen
dc.date.issued2016-05-30en
dc.identifier.citationJournal of Computational Electronics; Online first 30 May 2016en
dc.identifier.issn1569-8025en
dc.identifier.issn1572-8137en
dc.identifier.doi10.1007/s10825-016-0834-1en
dc.identifier.urihttp://hdl.handle.net/10149/611528en
dc.description.abstractIn this paper, an improved inductor simulator structure is presented, which can be configured as either grounded or floating inductor simulator with low component count. To achieve simplified structure, inductor simulator circuits are designed using a minimal number of transistors and small capacitance, rather than the complex components/modules such as current convey and operational trans-conductance amplifier which are traditionally used. The simulation results based on 0.5μm CMOS process parameters show that the proposed structure is able to produce a broad range of inductance values and compared to other similar structures, it provides wider operational frequency bandwidth for the same or comparable inductance value. Furthermore, the structure can be implemented with much smaller chip area using a small capacitance in the circuit, but at the price that it has a higher minimum operational frequency compared to other structures.en
dc.language.isoenen
dc.publisherSpringeren
dc.relation.urlhttp://link.springer.com/10.1007/s10825-016-0834-1en
dc.rightsThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. For full details see http://link.springer.com/article/10.1007/s10825-016-0834-1#copyrightInformation [Accessed 02.06.16]en
dc.subjectgrounded inductor simulatoren
dc.subjectfloating inductor simulatoren
dc.subjectactive inductoren
dc.subjectCMOS integrated circuitsen
dc.subjectMOSFETen
dc.subjectoperational frequencyen
dc.titleAn improved CMOS-based inductor simulator with simplified structure for low-frequency applicationsen
dc.typeArticleen
dc.contributor.departmentTeesside University. Technology Futures Instituteen
dc.identifier.journalJournal of Computational Electronicsen
or.citation.harvardZhong, L., Lai, X., Xu, D., Short, M., Yuan, B., Wang, Z. (2016) 'An improved CMOS-based inductor simulator with simplified structure for low-frequency applications' Journal of Computational Electronics; Online first 30 May 2016 : DOI: 10.1007/s10825-016-0834-1en
dc.eprint.versionPublisher's Version/PDFen
dc.embargononeen
dc.date.accepted2016-04-30-
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